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| SMD Type TrenchMOSTM standard level FET KUK7606-55B TO-263 Features Very low on-state resistance Q101 compliant 175 rated + .2 8 .7 -00.2 + .1 1 .2 7 -00.1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Standard level compatible. +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + .2 5 .2 8 -00.2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 + .2 1 5 .2 5 -00.2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain-source voltage Drain-gate voltage RGS = 20 KU Gate-source voltage Drain current (DC) Tmb = 25 ,VGS = 10 V Drain current (DC) Tmb = 100 ,VGS = 10 V Drain current (pulse peak value) *1 Total power dissipation Tmb = 25 Storage & operating temperature reverse drain current (DC) Tmb = 25 pulsed reverse drain current *1 non-repetitive avalanche energy *2 Thermal resistance junction to mounting base Thermal resistance junction to ambient * 1 Tmb = 25 ; pulsed; tp 10 is; 55 V; VGS = 10 V; RGS = 50U;starting Tmb = 25 Symbol VDS VDGR VGS ID ID IDM Ptot Tstg, Tj IDR IDRM EDS(AL)S Rth j-mb Rth j-a 145 75 582 254 -55 to 175 145 75 582 680 0.59 50 A A A J K/W K/W Rating 55 55 Unit V V V A A A W *2 unclamped inductive load; ID = 75 A;VDS 5 .6 0 1 gate 1 Gate 2 drain 2 Drain 3 source 3 Source www.kexin.com.cn 1 SMD Type KUK7606-55B Electrical Characteristics Ta = 25 Parameter drain-source breakdown voltage Symbol V(BR)DSS Testconditons ID = 0.25 mA; VGS = 0 V;Tj = 25 ID = 0.25 mA; VGS = 0 V;Tj = -55 ID = 1 mA; VDS = VGS;Tj = 25 gate-source threshold voltage VGS(th) ID = 1 mA; VDS = VGS;Tj = 175 ID = 1 mA; VDS = VGS;Tj = -55 Zero gate voltage drain current gate-source leakage current drain-source on-state resistance total gate charge gate-to-source charge gate-to-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance source-drain (diode forward) voltage reverse recovery time recovered charge IDSS IGSS RDSon Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf Ld Ls VSD trr Qr from drain lead 6 mm from package to centre of die VDD = 30 V; RL = 1.2U;VGS = 10 V; RG = 10 U VGS = 0 V; VDS = 25 V;f = 1 MHz VGS = 10 V; VDD = 44 V;ID = 25 A VDS = 30 V; VGS = 0 V;Tj = 25 VDS = 30 V; VGS = 0 V;Tj = 175 VGS = 20 V; VDS = 0 V Transistors IC Min 55 50 2 1 Typ Max Unit V V 3 4 V V 4.4 0.02 1 500 2 5.1 100 6 12 64 14 19 3825 783 235 30 46 85 39 4.5 2.5 5100 940 322 V iA iA nA mU mU nC nC nC pF pF pF ns ns ns ns nH nH nH VGS = 10 V; ID = 25 A;Tj = 25 VGS = 10 V; ID = 25 A;Tj = 175 from source lead to source bond pad Is = 25 A; VGS = 0 V IS = 20 A; -dIF/dt = -100 A/is; VGS = -10 V; VDS = 30 V 7.5 0.85 73 82 1.2 V ns nC 2 www.kexin.com.cn |
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